Detectors:
• SE Everhart-Thornley detector (ET-SED)
• In-lens detectors: Lower (T1) and Upper (T2)
• X-Max 150 EDS silicon drift detector for elemental analysis, energy resolution 127 eV @ MnKα (Oxford)
• IR-CCD camera to track the sample position

Lateral resolution, electron imaging:
• 1.0 nm at 30 kV
• 1.6 nm at 1 kV
• 2.5 nm at 1 kV at eucentric working distance

Ion optics:
• Voltage: 500 V to 30 kV
• Beam current: 1.5 pA - 65 nA in 15 steps
• Lateral resolution: 3.0 nm

• Nano-manipulator EasyLift EX
• Platinum deposition (Pt) via gas injection system
• Beam deceleration

• Translation of eucentric sample stage in x/y: 110 x 110 mm
• Navigation and pattering software
• Integrated plasma cleaner

Applications:
• Cross section sample preparation
• Nano- and micro-manipulation
• 3D slicing tomography
with electron and elemental EDX contrast
3D reconstruction with Amira-Avizo Software