Detectors:

• SE Everhart-Thornley detector (ET-SED)

• In-lens detectors: Lower (T1) and Upper (T2)

• X-Max 150 EDS silicon drift detector for elemental analysis, energy resolution 127 eV @ MnKα (Oxford)

• IR-CCD camera to track the sample position

Lateral resolution, electron imaging:

• 1.0 nm at 30 kV

• 1.6 nm at 1 kV

• 2.5 nm at 1 kV at eucentric working distance

Ion optics:

• Voltage: 500 V to 30 kV

• Beam current: 1.5 pA - 65 nA in 15 steps

• Lateral resolution: 3.0 nm

• Nano-manipulator EasyLift EX

• Platinum deposition (Pt) via gas injection system

• Beam deceleration

• Translation of eucentric sample stage in x/y: 110 x 110 mm

• Navigation and pattering software

• Integrated plasma cleaner

Applications:

• Cross section sample preparation

• Nano- and micro-manipulation

• 3D slicing tomography

with electron and elemental EDX contrast

3D reconstruction with Amira-Avizo Software